^mi-(londu.ct oi , una. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 npn - MPS650, mps651; pnp - mps750, mps751 mps651 and mps751 are preferred devices amplifier transistors maximum ratings thermal characteristics collector 3 rating collector -emitter voltage MPS650; mps750 mps651;mps751 collector- base voltage MPS650; mps750 mps651; mps751 emitter -base voltage collector current - continuous total power dissipation @ ta = 25c derate above 25c total power dissipation @ tc = 25c derate above 25c operating and storage junction temperature range symbol vce vcb veb ic pd pd tj. tstg value 40 60 60 80 5.0 2.0 625 5.0 1.5 12 -55 to +150 unit vdc vdc vdc adc mw mw/c w mw/c c npn collector 3 emitter pnp emitter to-92 characteristic thermal resistance, junction-to-ambient thermal resistance, junction-to-case symbol vce vcb max 200 83.3 unit c/w c/w straight lead bulk pack stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished b> nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors entourages customers to verity that datasheets are current before placing orders.
npn - MPS650, mps651; pnp - mps750, mps751 electrical characteristics (tc = 25c unless otherwise noted) characteristic symbol win max unit off characteristics collector -emitter breakdown voltage (note 1) (lc = 10madc, ib = 0) MPS650, mps750 mps651, mps751 collector -base breakdown voltage (lc = 100nadc, ie = 0) MPS650, mps750 mps651 , mps751 emitter- base breakdown voltage (lc = 0, ie = 10nadc) collector cutoff current (vcb = 60vdc, ie = 0) MPS650, mps750 (vcb = 80vdc, ie = 0) mps651.mps751 emitter cutoff current (veb = 4.0 v, lc = 0) v(br)ceo v(br)cbo v(br)ebo icbo iebo 40 60 60 80 5.0 _ - - _ ? 0.1 0.1 0.1 vdc vdc vdc (iadc madc on characteristics (note 1) dc current gain (lc = 50 ma, vce = 2.0 v) (lc = 500 ma, vce = 2.0 v) (ic = 1.0a, vce = 2.0v) (ic = 2.0a, vce = 2.0v) collector -emitter saturation voltage (ic = 2.0a, ib = 200ma) (lc = 1.0 a, ib= 100ma) base-emitter on voltage (ic=1.0a,vce = 2.0v) base -emitter saturation voltage (ic = 1.0a, ib = 100ma) hfe vce(sat) vbe(on) vbe(sat) 75 75 75 40 _ ? - - 0.5 0.3 1.0 1.2 vdc vdc vdc small-signal characteristics current- gain - bandwidth product (note 2) (lc = 50 madc, vce = 5-0 vdc, f = 100 mhz) ft 75 - mhz 1. pulse test: pulse width < 300 us, duty cycle = 2.0%. 2. fj is defined as the frequency at which |hfe| extrapolates to unity. npn pnp 300 270 240 s 210 2 cc o o o q 180 150 120 90 60 30 25c i i i ii vce = 2.0 v 10 20 50 100 200 500 1.0 a 2.0 a 4.0 a lc, collector current (ma) figure 1. MPS650, mps651 typical dc current gain -10 -20 -50 -100 -200 -500 -1.0 a-2.0 a-4.0 a lc, collector current (ma) figure 2. mps750, mps751 typical dc current gain
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